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STUDY THE STRUCTURAL AND ELECTRICAL PROPERTIES OF CdTe:Ag THIN FILMS | ||
| Journal of Al-Nahrain University - Science | ||
| Article 1, Volume 13, Issue 2, 2010, Pages 129-135 | ||
| Author | ||
| Hanaa I. Mohammed | ||
| Abstract | ||
| The influence of silver doped n-type polycrystalline CdTe film with thickness of 200 nm and rate deposition of 0.3 nm.s-1 prepared under high vacuum using thermal co-evaporation technique on its some structural and electrical properties was reported. The X- ray analysis showed that all samples are polycrystalline and have the cubic zinc blend structure with preferential orientation in the [111] direction. Films doping with impurity percentages (2, 3, and 4) %Ag lead to a significant increase in the carrier concentration, so it is found to change from 23.493×108 cm-3 to 59.297×108 cm-3 for pure and doped CdTe thin films with 4%Ag respectively. But films doping with impurity percentages above lead to a significant decrease in the electrical conductivity and Hall mobility, so they are found to change from 6.3×10-7(Ω.cm)-1 to 1.59 ×10-7(Ω.cm)-1 , and from 16.759 ×102 cm2.(V.sec)-1 to 1.675 ×102 cm2.(V.sec)-1 respectively, for pure and doped CdTe thin films with 4%Ag. And also the doping lead to change the kind of conductivity for thin films obtain, so we found that pure CdTe thin film is n-type and then convert to p-type when thin film doped with (2, 3, and4) %Ag | ||
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