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Preparation and Characterization of MOS Device using MgO Film as A Dielectric Material | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 28, Issue 21, 2010, Pages 6253-6262 PDF (274.85 K) | ||
| DOI: 10.30684/etj.28.21.4 | ||
| Authors | ||
| Farhan A. Mohamed; Evan T. Salem | ||
| Abstract | ||
| In the present work, fabrication and characterization of Al/MgO/Si MOS device has been carried out using PLD as a deposition technique, and for comparison Al/SiO2/Si MOS device has been also constructed. The obtained result show that , The Electrical and photovoltaic characteristics of MOS device are strongly dependent on the oxide type and thickness, beside that, the C-V measurement reveled that prepared device are of abrupt type. The Spectral Responsivity measurement of (Al/MgO/Si) MOS device is found to be 0.27A/W while of (Al/SiO2/Si) MOS device is 0.20A/W and the Rise and Response time measurement of (Al/MgO/Si) MOS device was shorter than of (Al/SiO2/Si) MOS device. | ||
| Keywords | ||
| MgO thin film; MOS device; PLD technique; electrical and photovoltaic technique | ||
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