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Effect of X-Ray on the properties of AlGaAs semiconductor Laser | ||
| Kirkuk Journal of Science | ||
| Article 1, Volume 5, Issue 1, 2010, Pages 67-76 PDF (0 K) | ||
| DOI: 10.32894/kujss.2010.41129 | ||
| Authors | ||
| Wlla Mahfooth Mohammed Ameen; Sabri Jasem Mohammed | ||
| Abstract | ||
| In this research effect caused by X-Ray on the properties of AlGaAs laser has been carried auto at different times ,there properties include the I-V and I-P at 180oC. It is noted that these properties has change when the laser is exposed to X-ray radiation also the stimulated emission is completely eliminated at moderate exposure times, but at longer exposure times (45-90)min the laser break down and both stimulated and spontaneous emission were completely disappear. Creased with the disappearing of each at the catalytic spontaneous resurrections. | ||
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