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Study the Effect of X-Ray on BJT Transistor at Different Periods of Time | ||
| Kirkuk Journal of Science | ||
| Article 1, Volume 5, Issue 2, 2010, Pages 65-75 PDF (0 K) | ||
| DOI: 10.32894/kujss.2010.41433 | ||
| Author | ||
| Walla M. Mohammad | ||
| Abstract | ||
| In this research it has been studied the influence of X-Ray on the BJT (bipolar junction transistor ) NPN type NO 2N3035 for (5,10,15,20,25,30,35,40) min intervals . the (ICE ,VCE) and (IB-VBE ) characteristics have been studied for every irradiation time to in addition to study the change in (VB – β ) values according to the irradiation times . Also the transistor used as an amplifier which has the reverse feedback to study the irradiation effect on the amplification factor (Aƒ) . it is found that the values of (VCE,IC) and (VB, β) have been decreased as the irradiation times decreased . the transistor showed a littlie changes of (Aƒ) when the reverse feedback used and the output signal suffering no any distortion . | ||
| Keywords | ||
| study; effect; ray; BJT Transistor; Different Periods of Time; BJT | ||
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