- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Theoretical Model for Semiconductor System GaP: Ni2+ | ||
| Rafidain Journal of Science | ||
| Article 14, Volume 19, Issue 6, 2008, Pages 174-181 PDF (0 K) | ||
| DOI: 10.33899/rjs.2008.41434 | ||
| Authors | ||
| Adnan M.AL-Sheikh; Heba M.T.AL-Hubaity | ||
| Abstract | ||
| Studies of III-V semi-conducting compounds doped with Ni shows the need to introduce a theoretical model for GaP:Ni system. A theoretical model using orthorhombic strain have been constructed with represent a promising approach to evaluate the energy levels for this system and interpret the experimental data of Zeeman studies of GaP:Ni2+ which have ground term 3F split with in tetrahedral crystal field into excited state 3T2 and ground state 3T1. | ||
|
Statistics Article View: 376 PDF Download: 169 |
||