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The Effect of Radiation on the Electrical Properties of MOS Devices | ||
| Rafidain Journal of Science | ||
| Article 3, Volume 16, Issue 2, 2005, Pages 12-20 PDF (0 K) | ||
| DOI: 10.33899/rjs.2005.41529 | ||
| Authors | ||
| Nawfel Y. Jamil; Meaad Salem; Mohammed S. Ismail | ||
| Abstract | ||
| Samples of MOS devices which were prepared by anodic oxidation method in which three electrodes used with HCl of 0.1 M. The thicknesses of SiO2 film were between 45& 80Ao . The effect of -ray on the characteristic of these devices studied through the measurements of I-V and C-V before and after irradiation. The results point to that the capacitance decreased after irradiation and an increase in the conductivity observed which indicates a decrease of potential barriers of these devices. The measurement of I-V for these samples as solar cell showed a decrease in the output power. | ||
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