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The development and studies the current – voltage (I-V) characteristics for the metal- oxide-semiconductor | ||
| Journal of Kufa - physics | ||
| Article 1, Volume 3, Issue 1, 2011, Pages 12-19 | ||
| Authors | ||
| Adel H.AL-Kiat; ; A.S.Al-Rowass Naeema Hadi Ali; | ||
| Abstract | ||
| This paper contain the preparation of metal-oxide- semiconductor field- effect transistor MOSFET by using the lightography technique. In this work we studied (I-V) characteristics and also some physical variables for transistor calculated. The prepared transistor by using p- type silicon as a substrate has n-type channel (nMOSFET) its length and width equal to L=50 µm ,Z = 1000µm . The results showed that the output characteristics (ID-VD) and the trasfer charasteristics (ID-VG) was in agreement with the theoretical behaviour of the transistor , and the transistor is from the normally – on type nMOSFET depletion mode , with pinch – off voltage equal to -4 volt . | ||
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