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Electrical and Electronical Properties of Silicon Nanostructure Produced by Electronical Etching | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 27, Issue 14, 2009, Pages 2523-2530 PDF (187.22 K) | ||
| DOI: 10.30684/etj.27.14.1 | ||
| Authors | ||
| B. G. Rasheed; E. T. Saleem | ||
| Abstract | ||
| Porous silicon constituting silicon nanostructures layer have been produce on crystal silicon using different preparation condition in electronical etching process. The electrical properties of the PS/c-Si heterojunction were studied and adopted to obtain the electronic structure and construct the energy band diagram of the device. This device could be used in various applications and was found to be a staggered type. | ||
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