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Influence of Post- Annealing on The Properties of Cuxs: Al, Fe Films Deposited By C B D | ||
| Engineering and Technology Journal | ||
| Article 1, Volume 27, Issue 14, 2009, Pages 2632-2641 PDF (311.15 K) | ||
| DOI: 10.30684/etj.27.14.9 | ||
| Authors | ||
| Ali M . Mousa; Abbas F. Sabbar | ||
| Abstract | ||
| Thin films of copper sulfide (CuxS) were deposited at room temperature on glass substrates from solution containing copper (II) chloride, triethanolamine, and thiourea at appropriate pH (10-11). Two types of doping salts were used (AlCl3 & FeCl3) in four different weights (1, 1.5, 2, and 2.5) mg. The effect of introducing impurities and post-annealing was studied .The as-deposited films were found to be amorphous, while the post annealed were polycrystalline. The changes in optical and electrical properties of doped films were also studied. The electrical conductivity was found to be highly dependent on annealing conditions, the resistivity of doped films was between (0.022-8.75) Ω cm. Optical band gaps of doped films determined from absorption spectra were found to have values within the range of (2.17-2.33) eV. | ||
| Keywords | ||
| Chemical bath deposition; Optical properties; electrical properties; Post; annealing | ||
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