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The Electrical and Optical Properties of SnO2 – Si(n) Structure Solar Cells. | ||
| Al-Rafidain Engineering Journal (AREJ) | ||
| Article 1, Volume 13, Issue 3, 2005, Pages 1-8 PDF (0 K) | ||
| DOI: 10.33899/rengj.2005.45668 | ||
| Author | ||
| Dr. Khalid K. Mohammed | ||
| Abstract | ||
| . Abstract: • In this paper the SnO2 will be examined to be used as a transparent antireflection coating with the n –type silicon wafer to fabricate the deposited SnO2 silicon Solar cell using vacuum evaporation technique. This SnO2 layer is simultaneously an antireflecting coating and a transparent upper contact. The oxidation of the Si surface takes place simultaneously with the evaporation process. A semiconductor – insulator – semiconductor (SIS) structure was obtained in such a way. The photoelectrical parameters of such SIS system of AM 1.5 conditions are: the short circuit current 18.5 mA/cm2, the open circuit voltage 0.48 V and the efficiency is 7.0%. The subgap response of the resulted structure is particularly strong and extends to wavelength up to 1100nm | ||
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