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Noise Measurement for Obtaining Optimum Point of Detection System by Using Field Effect Transistor (FET) | ||
| journal of kerbala university | ||
| Article 1, Volume 4, Issue 4, 2008, Pages 245-257 PDF (0 K) | ||
| Authors | ||
| Mohanned Hassan Ali; Mukhalad Kadom Marza; Haider Khder Lateef | ||
| Abstract | ||
| The designed circuit in this research is measured several types of noise and it’s analysis, reduction and amplification of received signal value by using the detection system type Field Effect Transistor (FET Tr) the aim of using this type of amplifier in designed system because of it’s efficient matching between input and output impedance, this will increase performance in detection of signal and noise. Also, all equations that help in calculation of noise voltage and noise current are derived and effect of bias resistance and capacitance of detector also was studied. Research study shows that the preamplifier noise is primarily influence by the first stage noise provided that the gain of that stage is large (Kt=8.87), total noise voltage to detection system (En T=3.314 nV), total noise current (InT=5.41 fA), noise figure (NF=0.0093 dB) at optimum source resistance and the detector resistance (2.5 MΩ) photoconductive type. | ||
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