(2009). Effect of Annealing On Some structure Properties and Hall effect of (ZnS0.1Se0.9) Films.. , 5(1), 89-97.
. "Effect of Annealing On Some structure Properties and Hall effect of (ZnS0.1Se0.9) Films.". , 5, 1, 2009, 89-97.
(2009). 'Effect of Annealing On Some structure Properties and Hall effect of (ZnS0.1Se0.9) Films.', , 5(1), pp. 89-97.
Effect of Annealing On Some structure Properties and Hall effect of (ZnS0.1Se0.9) Films.. , 2009; 5(1): 89-97.

Effect of Annealing On Some structure Properties and Hall effect of (ZnS0.1Se0.9) Films.

journal of kerbala university
Article 1, Volume 5, Issue 1, 2009, Pages 89-97    PDF (0 K)
Abstract
The effect of annealing (Ta=300,373,423) K on some structural properties and hall effect has been studied (concentration (nH), Hall mobility (µH),and drift velocity (vd)) had been measured for ZnS0.1Se0.9 films with different thickness (t=0.3,0.5, and 0.7 µm) which were prepared at room temperature using thermal evaporation under vacuum . We notice from this study that the films at all thicknesses and tempertures have a negative Hall coefficient (n–type charge carriers).
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