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Optical properties of silicon nitride thin films deposited by TEACO2 laser induced chemical vapor deposition | ||
| journal of kerbala university | ||
| Article 1, Volume 5, Issue 2, 2009, Pages 74-80 PDF (0 K) | ||
| Author | ||
| Hammad Rahaim Al-Azawi | ||
| Abstract | ||
| Amorphous silicon nitride thin films were deposited on quartz substrate at temperatures 350C with deposition rate o.6 nm/pulse by TEACO2 laser induced chemical vapor deposition (LICVD). The reactant gases photo decompose through collision assisted multiple photon dissociate (MPD). The optical properties (absorption spectra, transmittance, absorption coefficient, and optical energy gap) of these amorphous silicon nitride thin films have been characterized, the optical band gap of the films was varied between (1.5-3.0 eV) by changing the reacting gases SiH4 and NH3 ratio in reactant chamber. It was seen that the transmission of these films for visible wavelength increase by increasing the content of nitrogen in the films than that for high silicon content. X-ray photoelectron spectroscopy (XPS) used to determine the composition and purities of the deposited films. The nitrogen content of the films was varied between (16%-57%) where the later represent stoichiometric silicon nitride Si3N4. Also from (XPS), these films have high purity and content about 4% oxygen. this high quantity of oxygen attributed to that the amorphous silicon nitride thin films have nanostructure. | ||
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