R.M.S.Al-Haddad, , A-K.Hussain, A., A.A.Al-Hamdani, K. (2010). Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique. , 8(13), 97-100.
R.M.S.Al-Haddad; Ali A-K.Hussain; Kadhim A.A.Al-Hamdani. "Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique". , 8, 13, 2010, 97-100.
R.M.S.Al-Haddad, , A-K.Hussain, A., A.A.Al-Hamdani, K. (2010). 'Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique', , 8(13), pp. 97-100.
R.M.S.Al-Haddad, , A-K.Hussain, A., A.A.Al-Hamdani, K. Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique. , 2010; 8(13): 97-100.

Current–voltage and capacitance-voltage characteristics of Se/Si heterojunction prepared by DC planar magnetron sputtering technique

Iraqi Journal of Physics
Article 1, Volume 8, Issue 13, 2010, Pages 97-100
Authors
; Ali A-K.Hussain; Kadhim A.A.Al-Hamdani
Abstract
In this work, the effect of annealing temperature on the electrical properties are studied of p-Se/ n-Si solar cell, which p-Se are deposit by DC planar magnetron sputtering technique on crystal silicon. The chamber was pumped down to 2×10−5 mbar before admitting the gas in. The gas was Ar. The sputtering pressure varied within the range of 4x10-1 - 8x10-2mbar by adjusting the pumping speed through the opening control of throttle valve. The electrical properties are included the C-V and I-V measurements. From C-V measurements, the Vbi are calculated while from I-V measurements, the efficiency of solar cell is calculated.
Keywords
Si heterojunction; DC planar; magnetron sputtering
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