- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Analytical Performance Modeling of InP-InGaAs Hetero-junction Avalanche Photodiode | ||
| Iraqi Journal of Physics | ||
| Article 1, Volume 7, Issue 10, 2009, Pages 90-101 | ||
| Abstract | ||
| In this study, an analytical model depending on experimental results for InP-InGaAs avalanche photodiode at low bias was presented and the characteristics of gain for this photodiode were determined directly by the impulse response. The model have considered the most important mechanisms contributing the photocurrent, they are trapping, photogeneration in the undepleted region and charge-carriers velocity due to the built-in electrical field. Also, the bandwidth was determined as a function to the total gain of photodiode and it was mainly determined by diffusion and trapping processes at low gain regarding to the multi-layer structure considered in this study. | ||
|
Statistics Article View: 168 PDF Download: 108 |
||