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Optical Properties of GaN Thin Flim | ||
| Iraqi Journal of Physics | ||
| Article 1, Volume 7, Issue 8, 2009, Pages 59-62 | ||
| Authors | ||
| Salah Ed-Din Mansure; Salma M Shaban | ||
| Abstract | ||
| GaN thin films were deposited by thermal evaporation onto glass substrates at substrate temperature of 403 K and a thickness of 385 nm . GaN films have amorphous structure as shown in X-ray diffraction pattern . From absorbance data within the range ( 200-900 ) nm direct optical energy gap was calculated . Also the others optical parameters like transmittance T, reflectance R , refractive index n , extinction coefficient k , real dielectric constant , and imaginary dielectric constant were determined . GaN films have good absorbance and minimum transmittance in the region of the visible light . | ||
| Keywords | ||
| GaN Thin Flim | ||
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