A. Adem, K., H. Sabbar, A., Kh.Al-Lamy, H. (2009). Study the Effect of annealing temperature on the Structure ofa-Se and Electrical Properties of a-Se/c-Si Heterojunction. , 7(8), 39-42.
Kadhim A. Adem; Ahssan H. Sabbar; Hussein Kh.Al-Lamy. "Study the Effect of annealing temperature on the Structure ofa-Se and Electrical Properties of a-Se/c-Si Heterojunction". , 7, 8, 2009, 39-42.
A. Adem, K., H. Sabbar, A., Kh.Al-Lamy, H. (2009). 'Study the Effect of annealing temperature on the Structure ofa-Se and Electrical Properties of a-Se/c-Si Heterojunction', , 7(8), pp. 39-42.
A. Adem, K., H. Sabbar, A., Kh.Al-Lamy, H. Study the Effect of annealing temperature on the Structure ofa-Se and Electrical Properties of a-Se/c-Si Heterojunction. , 2009; 7(8): 39-42.

Study the Effect of annealing temperature on the Structure ofa-Se and Electrical Properties of a-Se/c-Si Heterojunction

Iraqi Journal of Physics
Article 1, Volume 7, Issue 8, 2009, Pages 39-42
Authors
Kadhim A. Adem; Ahssan H. Sabbar; Hussein Kh.Al-Lamy
Abstract
In this work Study effect of annealing temperature on the Structure of a-Se and electrical properties of a-Se/c-Si hetrojunction have been studied.The hetrojunction fabricated by deposition of a-Se film on c-Si using thermal evaporation.Electrical properties of a-Se/ c-Si heterojunction include I-V characteristics, in dark at different annealing temperature and C-V characteristics are considered in the present work.C-V characteristics suggested that the fabricated diode was abrupt type, built in potential determined by extrapolation from 1/C2-V curve. The built - in potential (Vbi) for the Se/ Si System was found to be increase from 1.21 to 1.62eV with increasing of annealing temperature
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