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Crystal Growth of Semiconductor CuAl0.4Ti0.6Se2 and studding the Structural Properties of its Alloy and Thin Film | ||
| Iraqi Journal of Physics | ||
| Article 1, Volume 7, Issue 9, 2009, Pages 102-105 | ||
| Authors | ||
| Ghuson H. Mohammed; Kadhim A. Al-Hamdani; Arshad H. Abdul-Kadom | ||
| Abstract | ||
| Tetragonal compound CuAl0.4Ti0.6Se2 semiconductor has been prepared by melting the elementary elements of high purity in evacuated quartz tube under low pressure 10-2 mbar and temperature 1100 oC about 24 hr. Single crystal has been growth from this compound using slowly cooled average between (1-2) C/hr , also thin films have been prepared using thermal evaporation technique and vacuum 10-6 mbar at room temperature .The structural properties have been studied for the powder of compound of CuAl0.4Ti0.6Se2u using X-ray diffraction (XRD) . The structure of the compound showed chalcopyrite structure with unite cell of right tetragonal and dimensions of a=11.1776 Ao ,c=5.5888 Ao .The structure of thin films showed amorphous structure and the films have crystallized under annealing treatment in the range of temperature (150-300) oC. | ||
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