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Electron transport mechanism of SnIn/c-Si Solar cell | ||
| Journal Of Wassit For Science & Medicine | ||
| Article 1, Volume 4, Issue 2, 2011, Pages 29-34 | ||
| Authors | ||
| Ahssan humyan saber; Z. T.Mohammed Noori; Kadhim A. Adem | ||
| Abstract | ||
| In this research was fabricated SnIn/c-Si Hetrojunction Solar Cell, where SnIn/c-Si heterojunction Solar Cell fabricated by deposition of SnIn film with thickness 500 nm on c-Si by using thermal evaporation. Electrical properties of SnIn thin film include d.c conductivity and Hall effect at different annealing temperature . From d.c conductivity found the electrical activation energies Ea1 and Ea2 increase with increasing of annealing temperature from 323K to 348K. From I-V characteristics, measurements efficiency of the found increasing from (1.5 to 4.67)% with increasing of annealing temperature . | ||
| Keywords | ||
| Key Words; Heterojunction solar cell; solar cell | ||
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