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Structural characterization and electrical properties of PbTe thin films | ||
| Journal of College of Education | ||
| Article 1, Volume 0, Issue 1, 2017, Pages 266-273 | ||
| Author | ||
| K. Abass Al-Qazaz | ||
| Abstract | ||
| Thin film of PbTe compound have been prepared on clean glass substrate at 300K by vacuum deposition. The thickness of the deposited film is 0.4 μm. The film has polycrystalline structure, which are indefied by x-ray diffraction. The structural parameters such as interplaner distance d, lattice parameter a, grain size D and dislocation density ρ have been determined. The electrical properties such as Seebeck coefficient S, electrical conductivity σ and power factor P at (288-453)K have been estimated and it was found that the thermopower activation energy Es=0.19 eV and activation energy of electrical conductivity have three values Ea1=0.137 eV, Ea2=0.194eV and Ea3=0.162 eV. | ||
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