- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Effect of the Direct Current Modulation on the Relaxation Oscillation and Turn-on Delay for a QWL In0.2Ga0.8As/GaAs | ||
| Journal of College of Education | ||
| Article 1, Volume 0, Issue 6, 2017, Pages 478-488 | ||
| Authors | ||
| Nabiel M. Naser; Saman Q. Mawlud; Mazin S. Othman | ||
| Abstract | ||
| In this paper the basic physical aspects of laser diode modulation and the operating principles of the laser modulation were described. The direct modulation characteristics of a quantum well laser diode (QWL) In0.2Ga0.8As/GaAs is investigated theoretically using computer program to simulate the optical output of a semiconductor laser subjected to current modulation. The specific laser device output characteristics for threshold current of 8.25 mA and the slope efficiency 1.13 W/A were obtained. The effect of the DC current on the turn-on delay and the relaxation oscillation frequency as a function of the DC current for a variable number of biasing bits were studied, it was obtained that the relaxation oscillation reaches a GHz region and the turn-on delay will limited between 0-1nsec. | ||
| Keywords | ||
| Laser Diode; Direct Modulation; Turn; On delay; Relaxation Oscillation | ||
|
Statistics Article View: 88 PDF Download: 53 |
||