H.Mustafa, M., Kh.Al-Lamy, H., A.Shehab, A. (2011). Structural and Electrical Properties Dependence on annealing temperature of a-Ge:Sb/c-Si Heterojunction. , 24(1), 72-78.
M. H.Mustafa; H. Kh.Al-Lamy; A. A.Shehab. "Structural and Electrical Properties Dependence on annealing temperature of a-Ge:Sb/c-Si Heterojunction". , 24, 1, 2011, 72-78.
H.Mustafa, M., Kh.Al-Lamy, H., A.Shehab, A. (2011). 'Structural and Electrical Properties Dependence on annealing temperature of a-Ge:Sb/c-Si Heterojunction', , 24(1), pp. 72-78.
H.Mustafa, M., Kh.Al-Lamy, H., A.Shehab, A. Structural and Electrical Properties Dependence on annealing temperature of a-Ge:Sb/c-Si Heterojunction. , 2011; 24(1): 72-78.

Structural and Electrical Properties Dependence on annealing temperature of a-Ge:Sb/c-Si Heterojunction

Ibn Al-Haitham Journal For Pure And Applied Science
Article 1, Volume 24, Issue 1, 2011, Pages 72-78
Authors
M. H.Mustafa; H. Kh.Al-Lamy; A. A.Shehab
Abstract
In this work, we are Study the effect of annealing temperature on the structure of a-Ge films doped with Sb and the electrical properties of a-Ge:Sb/c-Si heterojunction fabricated by deposition of a-Ge:Sb film on c-Si by using thermal evaporation. Electrical properties of a-Ge:Sb/c-Si heterojunction include I-V characteristics in dark at different annealing temperatures and C-V characteristics and with the C-V characteristics suggest that the fabricated heterojunction was abrupt type, built in potential determined by extrapolation from 1/C2-V curve and show that the built - inpotential (Vbi) for the Ge:Sb/Si system increases with the increase of annealing temperatures.
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