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Using Wet&Dry El油山g techndogies to etch SioWaFers | ||
| Journal of College of Education | ||
| Article 1, Volume 0, Issue 5, 2017, Pages 86-97 | ||
| Author | ||
| Intessar K.Abd | ||
| Abstract | ||
| In this paper used wet etching and dry etching technologies to etch Si-pType samples, the result were: - * wet etching (Isohopic etch, low damage on the surface, High selectivity, Smooth surface). *dry etching (Anisotropic etch, High damage on the surface, [ow selectivity, Roughness surface). Therefore, we can say that Dry or plasma etching has presented solutions to virtually all of the difficulties associated with wet etching. | ||
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