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Optoelectronic Properties of the Semiconductor Compound Cu0.5 Ag0.5 GaSe2 | ||
| basrah journal of science | ||
| Article 1, Volume 24, Issue 1, 2006, Pages 35-48 PDF (0 K) | ||
| Authors | ||
| M. N. Yaseen; W. A. Taha | ||
| Abstract | ||
| The electrical measurements were carried out under vacuum (10-1 torr) on different samples of the quaternary semiconductor compound prepared by slow cooling technique. Such measurements were also carried out on to the thin films of the compound prepared by evaporation under vacuum and D.C. sputtering methods. The electrical conductivity and activation energies of the prepared samples were studied under the influence of annealing processes. Hall measurements indicating that the thin films are P-type. Mobility and concentration of the carriers were calculated at room temperature. The optoelectronic properties of the compound (single crystal, bulk and thin films) were also studied. The tail width of the localized states of thin films were determined to be in the range (0.18- 0.29 eV). The photo-conducting properties and spectral response of the photodetector (made from the single crystal) were obtained and analyzed. The maximum spectral response of the detector was occurred at a wavelength of (720nm). | ||
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