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Optical properties of Pb1-xSnxSe epitaxial layers on (100)KCl, NaCl | ||
| Journal of Basrah Researches (Sciences) | ||
| Article 1, Volume 37, Issue 2, 2011, Pages 50-56 PDF (0 K) | ||
| Authors | ||
| Mohammad M. Ali; Seif M. Meshari | ||
| Abstract | ||
| Epitaxial Pb1-xSnxSe layers were grown onto cleaved and polished (100) KCl,(100) NaCl and (111)CaF2 substrates in a high vacuum system by means of the hot-wall-epitaxy (HWE) method. The source temperature of Pb1-xSnxSe ~ 570 oC and substrates temperature are ranging from 200 to 275 oC by increasing step 25 oC, growth rate (1.51-2.4 μm/h). The optical absorption constant is determined using FTIR in the (0.496-0.062) eV photon-energy range at room temperature. The data have been analyzed to estimate the forbidden bandwidth. | ||
| Keywords | ||
| xSnxSe optical properties; HWE; varies substrates of epitaxial growth | ||
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