Influence of doping  concentration on the main parameters of CdSe:Cu photoconductor detector

E.M.Al-Fwade,; S.K.J.Al-Ani,; Th.K.Al-Ani,

	Influence of doping concentration on the main parameters of CdSe:Cu photoconductor detector
Iraqi Journal of Physics
Article 1, Volume 9, Issue 16, 2011, Pages 61-65
Authors
; ;
Abstract
The photonconductor detectors CdSe:Cu was fabricated as a thin film of (1 μm) in thickness using vacuum evaporation technique. doping with copper was made using vacuum annealing at 350oC under argon atmosphere . The spectral responsivity and spectral detectivity of the detector were determined as a function of incident wavelength on the sample. A remarkable improvement in performance was absorbed for the specimen, which doping with (1-5 wt%) Cu. The spectral response increases with increasing of wavelength for incident radiation to maximum value, after that , it reduced sharply . There is a shifting for peak responsivity indirect of higher wavelength. The detectivity was increased with doping but its decreased as the concentration increases. The value of detectivity, which obtained on it , is higher than early published value.
Keywords
Detectors; doping; wavelength

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