Kh. Al- Lamy, H., Alias, M., N. Makadsi, M. (2011). Structural and D.C. conductivity investigation of the ternary alloy System a-AlXGa1-x As:H films prepared by new deposition method. , 9(16), 84-86.
H. Kh. Al- Lamy; M.F. Alias; M. N. Makadsi. "Structural and D.C. conductivity investigation of the ternary alloy System a-AlXGa1-x As:H films prepared by new deposition method". , 9, 16, 2011, 84-86.
Kh. Al- Lamy, H., Alias, M., N. Makadsi, M. (2011). 'Structural and D.C. conductivity investigation of the ternary alloy System a-AlXGa1-x As:H films prepared by new deposition method', , 9(16), pp. 84-86.
Kh. Al- Lamy, H., Alias, M., N. Makadsi, M. Structural and D.C. conductivity investigation of the ternary alloy System a-AlXGa1-x As:H films prepared by new deposition method. , 2011; 9(16): 84-86.

Structural and D.C. conductivity investigation of the ternary alloy System a-AlXGa1-x As:H films prepared by new deposition method

Iraqi Journal of Physics
Article 1, Volume 9, Issue 16, 2011, Pages 84-86
Authors
H. Kh. Al- Lamy; M.F. Alias; M. N. Makadsi
Abstract
In this paper Alx Ga1-x As:H films have been prepared by using new deposition method based on combination of flash- thermal evaporation technique. The thickness of our samples was about 300nm. The Al concentration was altered within the 0 £x £40.
The results of X- ray diffraction analysis (XRD) confirmed the amorphous structure of all AlXGa1-x As:H films with x £ 40 and annealing temperature (Ta)<200°C. the temperature dependence of the DC conductivity GDC with various Al content has been measured for AlXGa1-x As:H films.
We have found that the thermal activation energy Ea depends of Al content and Ta, thus the value of Ea were approximately equal to half the value of optical gap.
Keywords
ternary alloy System a; AlXGa; x As
Statistics
Article View: 68
PDF Download: 21


Journal Management System. Powered by iJournalPro.com