Ghafor, A., G.A.Al-Adam, , H.A.Salih, (2005). Fabrication and Characterization of Schottky Gate-Field effect transistor utilizing pyromallitic 3,4 benzoic acid di imide. , 23(1), 1-9.
A.Abdul Ghafor; G.A.Al-Adam; H.A.Salih. "Fabrication and Characterization of Schottky Gate-Field effect transistor utilizing pyromallitic 3,4 benzoic acid di imide". , 23, 1, 2005, 1-9.
Ghafor, A., G.A.Al-Adam, , H.A.Salih, (2005). 'Fabrication and Characterization of Schottky Gate-Field effect transistor utilizing pyromallitic 3,4 benzoic acid di imide', , 23(1), pp. 1-9.
Ghafor, A., G.A.Al-Adam, , H.A.Salih, Fabrication and Characterization of Schottky Gate-Field effect transistor utilizing pyromallitic 3,4 benzoic acid di imide. , 2005; 23(1): 1-9.

Fabrication and Characterization of Schottky Gate-Field effect transistor utilizing pyromallitic 3,4 benzoic acid di imide

basrah journal of science
Article 1, Volume 23, Issue 1, 2005, Pages 1-9    PDF (0 K)
Authors
A.Abdul Ghafor; ;
Abstract
Schotty gate-field effect transistor was fabricated using pyromallitic 3,4 benzoid acid as an effecting layer . Cast method was employed in depositing the polymeric material .
Electrical characteristic including output and transfer characteristic was carried out at room temperature . Electrical analysis howed that the device has a normally on mode with relatively high theshold and pinch off voltage .
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