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Doping effects on electrical and dynamical characteristics of GaAs / AlGaAs quantum cascade laser | ||
| Journal of Education and Science | ||
| Article 9, Volume 21, Issue 4, 2008, Pages 88-96 PDF (0 K) | ||
| DOI: 10.33899/edusj.2008.56103 | ||
| Authors | ||
| Erada A. Al-Dabbagh; Ragheed M. Ibrahim | ||
| Abstract | ||
| Abstract A theoretical analysis of the doping density level influence on the output characteristics of GaAs/Al0.45Ga0.55As triple quantum well QCL emitting at (=9 m) is presented. The employed theoretical model was based on Schrodinger equation analysis. Six different doping density levels, have been used in this study to explain doping density level influence on model gain as a function of wavelength and negative differential resistance (NDR). In the conventionally employed high doping regime, the wavelength shift to the shorter wavelength furthermore to decrease of the peak gain value with doping density level increase has been observed. The available current range before the occurrence of the NDR reduced when the doping density level decrease was found. | ||
| Keywords | ||
| quantum cascade laser; Doping effects; electrical characteristics of GaAs / AlGaAs; dynamical properties of GaAs / AlGaAs | ||
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