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Electrical Properties of Iodine - Doped 4-4'- Diaminodiphenyl Sulphone Terminated Poly (P-Aminobenzaldoxime) Thin Films.(PABD-DDS): I2 | ||
| Journal of Basrah Researches (Sciences) | ||
| Article 1, Volume 35, Issue 2, 2009, Pages 6-11 PDF (0 K) | ||
| Authors | ||
| Wael A. S. Abdul Ghafor; Waleed A. Hussain and Maha A.Abdul Hassan | ||
| Abstract | ||
| Current-Voltage characteristics of Iodine-doped 4-4' Diaminodiphenyl Sulphone terminated Poly (P-Aminobenzaldoxime) (PABD-DDS):I2 thin films in metal / polymer /metal structure have been investigated. Measurements have been carried out at temperature range 305-373K to determine the conduction mechanism. It was found that charge transfer complexes conduction mechanism is a dominant one throughout the temperature range studied. The average values of drift mobility and trapped carrier density estimated from these characteristics have been found strongly effected by the presence of impurities. The dependence of current and activation energy on the iodine concentration were explained on the basis of charge transfer interaction type between impurities and polymer structure. | ||
| Keywords | ||
| Conduction Mechanism; Conductivity; Semiconductive polymer | ||
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