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The effect of temperature of operation on the Turn-on Time Delay of Semiconductor Lasers | ||
| Journal of Basrah Researches (Sciences) | ||
| Article 1, Volume 34, Issue 1, 2008, Pages 8-19 PDF (0 K) | ||
| Author | ||
| M. R. Hassan | ||
| Abstract | ||
| In this paper, the effect of temperature of operation on the turn-on time delay, td, of semiconductor laser has been re-studied theoretically. We proposed a model to calculate the temperature dependence (TD) of td according to the TD of laser cavity parameters. An accurate analytical expression of td as a function of temperature has been driven in term of TD of threshold carrier density. The TD of threshold carrier density was calculated according to the TD of cavity parameters and not by the well-known exponential Pankove relation via the use of characteristics temperature and current. A very good agreement between the values of td calculated by the proposed model and the numerical method through the shown simulation results. We also re-drived approximated expressions of td as a function of temperature according to this model. | ||
| Keywords | ||
| semiconductor laser; turn; on time delay; temperature effec | ||
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