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Criteria for Plasma Domains in Gunn Diode Fabricated from GaAs and InP | ||
| Journal of Basrah Researches (Sciences) | ||
| Article 1, Volume 34, Issue 3, 2008, Pages 1-8 PDF (0 K) | ||
| Author | ||
| Hayder A. Ahmed | ||
| Abstract | ||
| Various parameters are proposed relevant to criteria for physical domains in solid-state plasmas. Strongly-and Weakly-coupled classical plasmas are divided according to the plasma parameter Γ. Classical and quantum domains are separated according to the quantum degeneracy parameter Λ .The weakly-coupled degenerate plasma is described in terms of the quantum compression parameter rs. In this paper, the application is made to Gunn diode, one of the long lasting Transferred Electron Devices (TED’s), fabricated from GaAs and InP, and suggested a new study to analyze the modes of operation of both devices in terms of these parameters by varying the charge-carrier concentration along the device layers (Substrate and active layer region) at 300K. Incorporating novel empirical relations have been done for the first time, for microwave operating frequency, which lead to other new relations for the device length and charge-carrier concentration, in terms of plasma domains. The four principal domains discussed are: strongly – and weakly – coupled classical plasmas, degenerate plasmas and weakly – coupled degenerate plasmas. | ||
| Keywords | ||
| Semiconductor devices; Microwave operating frequency; Plasma domains | ||
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