Study the Physical Properties Antimony Doped Zinc Oxide Thin  Films Prepared by Chemical Vapor Deposition

H. Nasir, Basil; I. Manssor, Mekhaiel

doi:10.33899/rjs.2012.59641

	Study the Physical Properties Antimony Doped Zinc Oxide Thin Films Prepared by Chemical Vapor Deposition
Rafidain Journal of Science
Article 12, Volume 23, Issue 6, 2012, Pages 163-179 PDF (0 K)
DOI: 10.33899/rjs.2012.59641
Authors
Basil H. Nasir; Mekhaiel I. Manssor
Abstract
Undoped ZnO and Sb-doped ZnO (0.3-10 at. %) thin films have been prepared by APCVD technique on the glass substrate at (400Cº, 425Cº, 450Cº, 475Cº, 500Cº(. The structural, optical and electrical properties of these thin films were studied. The results of the structural tests showed that these Films of ZnO:Sb were successfully prepared by (APCVD) X-ray measurement revealed that thin film structure was Polycrystalline of Hexagonal Wurtzite type with preferential orientation along the (002), (100) direction, in addition peaks for some phases for Antimony oxides were appeared. AFM measurement revealed that thin film have Roughness Average (19.4 nm) & RMS (24.3 nm). The optical measurement Transmission (T') were increase with as the doping percentage increased and decrease with increased substrate temperature, were found (79-90%), the band gap energies of the ZnO:Sb thin film are nearly the same as the pure ZnO. the best Electrical conductivity is appear with ZnO thin and (10% Sb) concentration at substrate temperatures (400Cº). The Hall measurement revealed that Resistivity were (1.8 Ω.cm), mobility ((146-4749) cm2/V.sec) and carrier concentration (1015 cm-3). The doped and undoped ZnO films exhibited n-type conductivity.
Keywords
ZnO

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