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Optoelectronic Characteristics of As-doped Silicon Photodetectors Produced by LID Technique | ||
| Iraqi Journal of Applied Physics Letters | ||
| Article 1, Volume 1, Issue 2, 2008, Pages 23-26 | ||
| Authors | ||
| A.A. Hadi; O.A. Hamadi | ||
| Abstract | ||
| In this work, optoelectronics characteristics of arsenic-doped silicon photodetectors produced by laser-induced diffusion technique were introduced. Results explained that the parameters of the photodetectors depend on laser energy and substrate temperature. Maximum Responsivity was obtained for the photodetectors prepared by laser fluence of 9.08J/cm2 at substrate temperature of 598K. The pulse response waveform of photodetectors illustrated that the rise time is not dominated by RC. Non-linearity deviation coefficient was improved by factors 2.1 for As-doped Si photodetectors when substrate temperature is raised from 300K to 598K. | ||
| Keywords | ||
| Silicon photodetectors; Photo; response; Laser; induced diffusion | ||
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