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Polynanocrystalline CuIn3Se5 Thin Film Photoabsorber Layer Produced by Pulsed-Laser Deposition | ||
| Iraqi Journal of Applied Physics Letters | ||
| Article 1, Volume 3, Issue 1, 2010, Pages 15-18 | ||
| Authors | ||
| A. Twerianovich; S. Berzeneev; E. Barissov | ||
| Abstract | ||
| Polycrystalline bulk CuIn3Se5 samples for pulsed laser deposition (PLD) targets were synthesized in evacuated quartz ampoules by vacuum melting of 99.999% pure elements. All the polynanocrystalline CuIn3Se5 thin films were deposited onto the glass and glass/ITO substrates by using the PLD technique. The synthesized bulk samples and deposited films were tested by using the XRD analysis. The time–temperature regime of PLD process was developed for preparation of polynanocrystalline CuIn3Se5 thin films with the same composition as the source target. We have used advanced 3-stages temperature-time regime. The thickness of prepared CuIn3Se5 layers was in the range from 300nm till 450nm. The influence of the thermal annealing on the photovoltaic properties and morphology of the as-deposited CuIn3Se5 layers was investigated. The technique of preparation of high photosensitive polynanocrystalline thin CuIn3Se5 films of n-type conductivity was elaborated. | ||
| Keywords | ||
| Polycrystalline films; PLD; Photoabsorber layer; CuIn | ||
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