Yussif, G., Enagar, A., Megazi, A. (2010). Characterization of E-Mode InZnO Thin Film Transistors Produced by DC Sputtering Technique. , 3(1), 19-22.
G.M.A. Yussif; A.M.H. Enagar; A.S. Megazi. "Characterization of E-Mode InZnO Thin Film Transistors Produced by DC Sputtering Technique". , 3, 1, 2010, 19-22.
Yussif, G., Enagar, A., Megazi, A. (2010). 'Characterization of E-Mode InZnO Thin Film Transistors Produced by DC Sputtering Technique', , 3(1), pp. 19-22.
Yussif, G., Enagar, A., Megazi, A. Characterization of E-Mode InZnO Thin Film Transistors Produced by DC Sputtering Technique. , 2010; 3(1): 19-22.

Characterization of E-Mode InZnO Thin Film Transistors Produced by DC Sputtering Technique

Iraqi Journal of Applied Physics Letters
Article 1, Volume 3, Issue 1, 2010, Pages 19-22
Authors
G.M.A. Yussif; A.M.H. Enagar; A.S. Megazi
Abstract
In this work, InZnO and InGaZnO were used as channel layers to fabricate enhancement mode thin film transistors on glass and flexible transparent substrate. The SiO2-In2O3-ZnO system and N2 plasma incorporated IZO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated.
Keywords
Thin Film Transistor; InZnO films; DC sputtering; ZnO devices
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