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Profiling of Antimony Diffusivity in Silicon Substrates using Laser- Induced Diffusion Technique | ||
| Iraqi Journal of Applied Physics Letters | ||
| Article 1, Volume 3, Issue 1, 2010, Pages 23-26 | ||
| Author | ||
| O.A. Hamadi | ||
| Abstract | ||
| In this work, profiles of laser-induced diffusion of antimony in silicon were presented. These profiles were considered to attempt enhancing of the silicon-based devices. This enhancement is attributed to the increasing achieved in the diffusion length within a certain layer of the active region in the device. Laser-induced diffusion is a perfect technique for improving the characteristics of electronic devices since it is flexible, contactless, clean and well controlled. | ||
| Keywords | ||
| Laser; induced diffusion; doped silicon; Transistor current gain | ||
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