- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Influence of annealing temperature on electrical properties of PbSe/n-Si heterojunction devices | ||
| Journal of College of Education | ||
| Article 1, Volume 0, Issue 1, 2017, Pages 306-318 | ||
| Author | ||
| Marwa Abdul Muhsien Hassan | ||
| Abstract | ||
| In the present work, p-PbSe thin films were prepared by using thermal evaporation technique at room temperature on n-type silicon substrate under vacuum of 10-6 mbar. Thickness of the film is 600 nm. The fabricated devices were subjected to post-deposition annealing at (303, 333, 363 and 393) K and 45 min. The effect of annealing temperature on the electrical properties of PbSe/n-Si junctions was studied. The electrical properties included the capacitance-voltage (C-V) and current-voltage (I-V) measurements. C-V characteristics suggest that the fabricated devices were abrupt type. The built in potential (Vbi) was determined by extrapolation from 1/C2-V curve to the point (V=0. It was equal to (0.7V) at room temperature and was calculated under different annealing temperatures, while from I-V measurements, the ideality factor (β) is calculated. | ||
|
Statistics Article View: 204 PDF Download: 103 |
||