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Laser-Controlled Photoluminescence Characteristics of Silicon Nanocrystallites Produced by Laser-Induced Etching | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 1, Issue 1, 2005, Pages 15-19 | ||
| Author | ||
| B.G. Rasheed | ||
| Abstract | ||
| In2O3 thin films have been deposited on silicon substrate by chemical spray pyrolysis. These films show high transparency in the visible and near-IR regions. Photoresponse of In2O3/c-Si isotype heterophotodiode without post-deposition heat treatment has been investigated in the visible and infrared regions. Peak response situated at 600nm was observed. External quantum efficiency was 32% at peak response. C-V measurements revealed that the junction was abrupt type and built-in potential around 1eV has been obtained. | ||
| Keywords | ||
| Laser; Induced Etching; Photoluminescence; Silicon Crystallites; Nano; structures | ||
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