- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Structural Characteristics Study of Indium Diffusion in Silicon Using a Pulsed Nd:YAG Laser | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 1, Issue 1, 2005, Pages 34-38 | ||
| Authors | ||
| W.K. Hamoudi; R.O. Dala Ali | ||
| Abstract | ||
| In the current study, a pulsed Nd:YAG laser was employed to induce indium diffusion in silicon by laser irradiation of a thin indium film deposited on silicon. The work was aimed to study the structural characteristics changes of the irradiated region resulting from varying laser pulse energy within the range (0.25-0.53)J and varying silicon temperature from 300K to 373K during laser irradiation. Optical and scanning electron microscopes were used for the surface topography study of the samples. The study showed formation of linear cracks, protrusions and craters depending on the laser energy used. The indium diffusion depth within the silicon was determined using an energy dispersive spectra (EDS). This was done when illuminating at the laser melting threshold at substrate temperature of 373K and when illuminating at higher laser energy and substrate at room temperature (300K). the diffusion depth increased and the impurity concentration at the surface decreased as laser energy got higher. Higher substrate temperature helped increasing the impurity concentration at the surface. | ||
| Keywords | ||
| Laser; induced diffusion; Indium; doped silicon; YAG Laser; Surface topography | ||
|
Statistics Article View: 61 PDF Download: 6 |
||