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Characterization of CdS:In/Si Heterojunction Solar Cells | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 1, Issue 2, 2005, Pages 13-17 | ||
| Authors | ||
| S.K. Al-Ani; R.A. Ismail; H.F. Al-Ta | ||
| Abstract | ||
| In this work, CdS:In/Si anisotype heterojunction solar cells prepared by thermal evaporation technique of CdS thin films on monocrystalline silicon substrate have been fabricated, characterized and analyzed. Cells aparameters dependencies on the indium diffusion temperature were reported. The amximum obtained conversion efficiency was 8% at 93mW/cm2 (AM1) for cells made with indium diffusion temperature of 300°C. these cells are made without using antireflecting coatings and grid contacts. | ||
| Keywords | ||
| CdS; Solar cells; Anisotype heterojunction; Diffusion temperature | ||
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