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Band Diagram of p-PbTe/n-Si Heterostructure | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 1, Issue 2, 2005, Pages 27-30 | ||
| Authors | ||
| R.A. Ismail; W.K. Hamoudi; Y.Z. Dawood | ||
| Abstract | ||
| In the present work, the energy band diagram of p-PbTe/n-Si heterojunctions made by thermal evaporation of a polycrystalline PbTe layer deposited on a monocrystalline Silicon substrate is constructed. Based on I-V and C-V measurements, the band offsets ΔEC and ΔEV are found experimentally to be 270mV and 610mV respectively at 300K. | ||
| Keywords | ||
| PbTe; Heterojunctions; Energy band diagram | ||
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