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Junction Characteristics of Wide-Emitter (p)CdS-(n)Si-(p)Si Heterojunction Transistor | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 2, Issue 1, 2006, Pages 3-5 | ||
| Authors | ||
| R.A. Ismail; J.T. Jabbar; O.A.S. Abdulrazaq | ||
| Abstract | ||
| Fabrication and characterization of feasible heterojunction bipolar transistor (HBT) made by depositing of p-type CdS film on monocrystalline silicon homojunction were demonstrated. The ideality factors (n) of emitterbase and base-collector abrupt junctions were 1.6 and 1.8 respectively. The transistor exhibited current gain dc as high as 360. | ||
| Keywords | ||
| TFT; Heterojunction; Silicon devices | ||
|
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