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Characteristics of p-n Junction Silicon Carbide LED | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 2, Issue 1, 2006, Pages 17-21 | ||
| Author | ||
| S.I. Valskina | ||
| Abstract | ||
| Silicon carbide has been widely used as material for manufacturing yellow, red, green LED and optoelecronics devices (indicators, screens). The silicon carbide LED technology has been investigated for improvement of their operational characteristics. This includes the influences of the surface processing (etching, annealing), the formation method for the p-n junctions and the contacts on the LED properties. Light-emitting devices used as light sources for optical-fiber communication lines. LED fabricated by Al+ ion-implanted in 6H-SiC and investigated their characteristics for an effective green LED. The brightness of the ion-implanted p-n junction was found to be two orders higher than that of diffusion p-n junction, and the best value was 2000-10000 cd/m2 with passing current about 0.5mA through area 50x50μm and applied voltage about 2.6±0.2V. The ion-implanted structures showed a high stability of light in the temperature range of 77-600K. | ||
| Keywords | ||
| Silicon carbide; LED; Ion implantation | ||
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