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Synthesis of Silicon Nanowires by Selective Etching Process | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 4, Issue 3, 2008, Pages 15-17 | ||
| Author | ||
| A.T.S. Yee | ||
| Abstract | ||
| In this paper, selective etching process is used to synthesize SiNWs. This method arises from electroless metal deposition on a silicon wafer through selective etching. The electroless plating technique has many advantages such as low temperature processing and simple process with non-expensive deposition facilities. A clean p-type silicon wafer was etched in an aqueous solution containing hydrofluoric acid (HF) and silver nitrate (AgNO3) at 60ºC for 60 minutes. This aqueous solution was prepared by mixing both HF and AgNO3 in a plastic beaker and was heated in hot water bath. Electroless silver deposition will take place on the surface of Si wafer and their growth mechanism are analyzed on the basis of a self assembled localized microscopic electrochemical cell model. The structure of SiNWs is observed by using field emission scanning electron microscope (FESEM). It has revealed the formation of SiNWs with diameter ranging from 40 nm to 200 nm with the length of about 20 µm. The unique features of SiNWs have made them potentially applicable in solar cell, chemical sensing devices and basic components for nanoelectronic and optoelectronic devices. | ||
| Keywords | ||
| Silicon nanowires; Etching process; Silicon structures; CVD; PCVD | ||
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