Hamadi, O. (2008). Effect of Annealing on the Electrical Characteristics of CdO-Si Heterostructure Produced by Plasma-Induced Bonding Technique. , 4(3), 33-36.
O.A. Hamadi. "Effect of Annealing on the Electrical Characteristics of CdO-Si Heterostructure Produced by Plasma-Induced Bonding Technique". , 4, 3, 2008, 33-36.
Hamadi, O. (2008). 'Effect of Annealing on the Electrical Characteristics of CdO-Si Heterostructure Produced by Plasma-Induced Bonding Technique', , 4(3), pp. 33-36.
Hamadi, O. Effect of Annealing on the Electrical Characteristics of CdO-Si Heterostructure Produced by Plasma-Induced Bonding Technique. , 2008; 4(3): 33-36.

Effect of Annealing on the Electrical Characteristics of CdO-Si Heterostructure Produced by Plasma-Induced Bonding Technique

Iraqi Journal of Applied Physics
Article 1, Volume 4, Issue 3, 2008, Pages 33-36
Author
O.A. Hamadi
Abstract
In this work, the effect of annealing on the electrical characteristics of the CdO-Si heterojunction produced by plasma-induced bonding technique was studied. The heterojunction was consisting of n-type CdO on a p-type silicon substrate. Results showed reasonable improvement in the electrical characteristics of this heterojunction within a range of annealing temperatures, above which the heterojunction showed degradation in its characteristics. This work produces CdO-Si of much better characteristics than same heterojunctions produced by thermal evaporation technique.
Keywords
CdO; Si structure; Bulk bonding; Heterojunctions; Heat treatment
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