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Performance Comparison of InP-Based Phototransistors to PIN and UTC Photodiodes | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 4, Issue 4, 2008, Pages 13-17 | ||
| Author | ||
| C. Gonzalez | ||
| Abstract | ||
| The main characteristics of vertically illuminated InP/InGaAs-based heterojunction bipolar phototransistors (photo-HBT) developed at OPTO+ (Alcatel) were presented. Also, the design and fabrication of photo-HBT-based monolithically integrated circuits such as optoelectronic amplifier and mixers are described. Comparisons of some performances between photo-HBTs, PIN and UTC photodiodes are commented. | ||
| Keywords | ||
| InP; based devices; Phototransistors; PIN photodiodes; UTC devices | ||
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