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High-Quality Plasma- Induced Crystallization of Amorphous Silicon Structures | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 5, Issue 1, 2009, Pages 35-39 | ||
| Author | ||
| A.M. Aldhafiri | ||
| Abstract | ||
| The investigation of polycrystalline silicon made on glass and carbon coated nickel substrates by aluminum-induced crystallization of amorphous silicon (a-Si) is reported. Aluminum was sputtered onto a- Si films deposited in an ultra-high-vacuum plasma-enhanced chemical vapor deposition (PECVD) system to form Al/a-Si substrate structures. These samples were then vacuum annealed for 30min. at temperatures in the range 150-350°C. X-ray diffractometry (XRD) was utilized to determine the crystallization temperature. Annealing at 275°C resulted in the formation of crystalline Si as observed by XRD. The presence of these hillocks or bumps after annealing at 275°C and above confirms that the a-Si has been crystallized. | ||
| Keywords | ||
| PECVD; polycrystalline Si; Amorphous Si; XRD | ||
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