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Characteristics of a-Si:H Solar Cell Under Extended Illumination Condition Using NIR Laser | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 5, Issue 1, 2009, Pages 41-44 | ||
| Authors | ||
| S.F.A. Ali; E.A.F. Ali; S.H. Al Shaikh Hussin; F.M.M. Aasy | ||
| Abstract | ||
| In this work, characteristics of a-Si:H solar cell under extended illumination condition, using an NIR laser diode, were studied. These characteristics were introduced by calculations of recombination rate, open-circuit voltage and defect growth rate as functions of illumination time. Stabilized open-circuit voltage of 0.04V and photogeneration rate of ~2x1021cm-3 were observed. We present measurements on the decline of the open-circuit voltage VOC in a-Si:H solar cells during extended illumination (light-soaking). We used a near-infrared laser that was nearly uniformly absorbed in the intrinsic layer of the cell. At the highest photogeneration rate (about 2x1021cm-3), a noticeable decline (0.01V) occurred within about 10 minutes; VOC stabilized at 0.04V below its initial value after about 200 hours. We found that both the kinetics and the magnitudes of VOC are reasonably consistent with the predictions of a calculation combining a bandtail+defect picture for recombination and a hydrogen-collision model for defect generation. | ||
| Keywords | ||
| Light soaking; H junction; Solar cells; Bandtail effect | ||
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