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Interfacial Adhesion of PZT Ferroelectric Thin Films Determined by Nano-Indentation Method | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 5, Issue 1, 2009, Pages 46-48 | ||
| Authors | ||
| X.J. Zheng; Y.C. Zhou | ||
| Abstract | ||
| We propose an elastic groundsill beam model with piezoelectric effect considered to assess the interfacial adhesion of ferroelectrics thin films, complemented and validated by nano-indentation fracture test on Pb(Zr0.52Ti0.48)O3 (PZT) thin films. It was observed from the loadindentation depth curves and atomic force microscopy (AFM) images that the fracture failure of PZT thin films induced by nano-indentations can be divided into three typical stages: no damage, bulging and spallation. The delamination of thin film systems was modeled as an interfacial crack propagation problem, with the energy release rate determined from the elastic groundsill beam model. For PZT thin films deposited on single Si substrate with thickness of 350nm and 450nm, the energy release rates per unit new crack area are in the range of 3.399~52.432J/m2 and the phase angles are constant of 13.3570. | ||
| Keywords | ||
| PZT structure; Interfacial adhesion; Thin films; Ferroelectric | ||
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